View sst39lf-vf080-016-03 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
8 Mbit / 16 Mbit (x8) Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet FEATURES: Organized as 1M x8 / 2M x8 Latched Address and Data 1 Single Voltage Read and Write Operations Fast Erase and Byte-Program: - 3.0-3.6V for SST39LF080/016 - Sector-Erase Time: 18 ms (typical) - 2.7-3.6V for SST39VF080/016 - Block-Erase Time: 18 ms (typical) 2 - Chip-Erase Time: 70 ms (typical) Superior Reliability - Byte-Program Time: 14 ľs (typical) - Endurance: 100,000 Cycles (typical) - Chip Rewrite Time: - Greater than 100 years Data Retention 15 seconds (typical) for SST39LF/VF080 3 Low Power Consumption: 30 seconds (typical) for SST39LF/VF016 - Active Current: 15 mA (typical) Automatic Write Timing - Standby Current: 4 ľA (typical) 4
Keywords
sst39lf-vf080-016-03 Datasheet, Design, MOSFET, Power
sst39lf-vf080-016-03 RoHS, Compliant, Service, Triacs, Semiconductor
sst39lf-vf080-016-03 Database, Innovation, IC, Electricity