View sst39sf040-03 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
4 Megabit (512K x8) Multi-Purpose Flash SST39SF040 Preliminary Specifications FEATURES:  Organized as 512K X8  Fast Erase and Byte-Program: 1  Sector-Erase Time: 18 ms typical  Single 5.0V Read and Write Operations  Chip-Erase Time: 70 ms typical  Superior Reliability  Byte-Program Time: 14 ľs typical  Endurance: 100,000 Cycles (typical)  Chip Rewrite Time: 8 seconds typical 2  Greater than 100 years Data Retention  Automatic Write Timing  Low Power Consumption:  Internal V Generation PP  Active Current: 10 mA (typical) 3  End-of-Write Detection  Standby Current: 30 ľA (typical)  Toggle Bit  Sector-Erase Capability  Data# Polling 4  Uniform 4 KByte sectors  TTL I/O Compatibility  Fast Read Access Time:  JEDEC Standard  45, 55 and 70 n
Keywords
sst39sf040-03 Datasheet, Design, MOSFET, Power
sst39sf040-03 RoHS, Compliant, Service, Triacs, Semiconductor
sst39sf040-03 Database, Innovation, IC, Electricity
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