View sst39sf040-03 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
4 Megabit (512K x8) Multi-Purpose Flash SST39SF040 Preliminary Specifications FEATURES: Organized as 512K X8 Fast Erase and Byte-Program: 1 Sector-Erase Time: 18 ms typical Single 5.0V Read and Write Operations Chip-Erase Time: 70 ms typical Superior Reliability Byte-Program Time: 14 ľs typical Endurance: 100,000 Cycles (typical) Chip Rewrite Time: 8 seconds typical 2 Greater than 100 years Data Retention Automatic Write Timing Low Power Consumption: Internal V Generation PP Active Current: 10 mA (typical) 3 End-of-Write Detection Standby Current: 30 ľA (typical) Toggle Bit Sector-Erase Capability Data# Polling 4 Uniform 4 KByte sectors TTL I/O Compatibility Fast Read Access Time: JEDEC Standard 45, 55 and 70 n
Keywords
sst39sf040-03 Datasheet, Design, MOSFET, Power
sst39sf040-03 RoHS, Compliant, Service, Triacs, Semiconductor
sst39sf040-03 Database, Innovation, IC, Electricity
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