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View sst39sf512-010-020-01 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

sst39sf512-010-020-01

512 Kbit / 1 Mbit / 2 Mbit (x8) Multi-Purpose Flash SST39SF512 / SST39SF010 / SST39SF020 Data Sheet FEATURES: • Organized as 64K x8 / 128K x8 / 256K x8 • Fast Erase and Byte-Program: 1 – Sector-Erase Time: 7 ms (typical) • Single 5.0V Read and Write Operations – Chip-Erase Time: 15 ms (typical) • Superior Reliability – Byte-Program Time: 20 ľs (typical) – Endurance: 100,000 Cycles (typical) – Chip Rewrite Time: 2 – Greater than 100 years Data Retention 2 seconds (typical) for SST39SF512 3 seconds (typical) for SST39SF010 • Low Power Consumption: 5 seconds (typical) for SST39SF020 – Active Current: 20 mA (typical) 3 • Automatic Write Timing – Standby Current: 10 ľA (typical) - Internal V Generation PP • Sector-Erase Capability • End-of-Write Detection 4 – Uniform

Keywords

 sst39sf512-010-020-01 Datasheet, Design, MOSFET, Power

 sst39sf512-010-020-01 RoHS, Compliant, Service, Triacs, Semiconductor

 sst39sf512-010-020-01 Database, Innovation, IC, Electricity

 

 
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