View sst39sf512-010-020-01 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
512 Kbit / 1 Mbit / 2 Mbit (x8) Multi-Purpose Flash SST39SF512 / SST39SF010 / SST39SF020 Data Sheet FEATURES: Organized as 64K x8 / 128K x8 / 256K x8 Fast Erase and Byte-Program: 1 Sector-Erase Time: 7 ms (typical) Single 5.0V Read and Write Operations Chip-Erase Time: 15 ms (typical) Superior Reliability Byte-Program Time: 20 ľs (typical) Endurance: 100,000 Cycles (typical) Chip Rewrite Time: 2 Greater than 100 years Data Retention 2 seconds (typical) for SST39SF512 3 seconds (typical) for SST39SF010 Low Power Consumption: 5 seconds (typical) for SST39SF020 Active Current: 20 mA (typical) 3 Automatic Write Timing Standby Current: 10 ľA (typical) - Internal V Generation PP Sector-Erase Capability End-of-Write Detection 4 Uniform
Keywords
sst39sf512-010-020-01 Datasheet, Design, MOSFET, Power
sst39sf512-010-020-01 RoHS, Compliant, Service, Triacs, Semiconductor
sst39sf512-010-020-01 Database, Innovation, IC, Electricity