View st13003 detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 1 2 SWITCH MODE POWER SUPPLIES 3 DESCRIPTION SOT-32 The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting INTERNAL SCHEMATIC DIAGRAM applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter V... See More ⇒
Keywords
st13003 Design, MOSFET, Power
st13003 RoHS, Compliant, Service, Triacs, Semiconductor
st13003 Innovation, IC, Electricity
BJT Parameters and How They Relate
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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