View stb50ne08 datasheet:

STB50NE08 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE? ” POWER MOSFET TYPE VDSS RDS(on) ID STB50NE08 80 V <0.024 ? 50 A TYPICAL R = 0.020 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED o LOW GATE CHARGE AT 100 C APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE D2PAK TO-263 DESCRIPTION (suffix ”T4”) This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size? ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics INTERNAL SCHEMATIC DIAGRAM and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID A