View stb50ne10 datasheet:

STB50NE10 ? N - CHANNEL 100V - 0.021? - 50A - D2PAK STripFET? POWER MOSFET TYPE VDSS RDS(on) ID STB50NE10 100 V <0.027 ? 50 A TYPICAL R = 0.021 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED o LOW GATE CHARGE AT 100 C APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE D2PAK TO-263 DESCRIPTION (suffix ”T4”) This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche INTERNAL SCHEMATIC DIAGRAM characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SO