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Order this document MOTOROLA by TIP120/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power NPN TIP120* Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. TIP121* • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc TIP122* VCEO(sus) = 60 Vdc (Min) — TIP120, TIP125 PNP VCEO(sus) = 80 Vdc (Min) — TIP121, TIP126 TIP125* VCEO(sus) = 100 Vdc (Min) — TIP122, TIP127 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc TIP126* VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc IIIIIIIIIIIIIIIIIIIIIIII • Monolithic Construction with Built–In Base–Emitter Shunt Resistors • TO–220AB Compact Package TIP127* IIIIIIIIIIIIIIIIIIIIIIII I