View tip122 utc datasheet:

UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 ~ +150 °C Junction Temperature Tj 150 °C Total Power Dissipation PD 65 W Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 5 V IC Collector Current 5 A ELECTRICAL CHARACTERISTICS(Ta=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage BVCEO IC=100mA 100 V Collector Cut-Off Current ICBO VCB=100V 200 uA Collector-Cut-Off Current ICEO VCE=50V 500 uA Emitter Cut-Off Curr