View tip145f sam detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
PNP EPITAXIAL TIP145F/146F/147F DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-3PF MIN h = 1000 @ V = -4V, IC = -5A FE CE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage VCBO V TIP145F - 60 V TIP146F - 80 V TIP147F - 100 Collector Emitter Voltage VCEO V - 60 TIP145F V 1. Base 2. Collector 3. Emitter - 80 TIP146F V - 100 TIP147F Emitter-Base Voltage VEBO - 5 V Collector Current (DC) IC - 10 A Collector Current (Pulse) IC - 15 A Base Current (DC) IB - 0.5 A Collector Dissipation ( TC=5 ) PC 60 W Junction Temperature TJ 150 Storage Temperature TSTG - 65 150 ELECTRICAL CHARACTER... See More ⇒
Keywords
tip145f sam Design, MOSFET, Power
tip145f sam RoHS, Compliant, Service, Triacs, Semiconductor
tip145f sam Innovation, IC, Electricity
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