View upa841td nq m16 datasheet:

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD µ µ µ NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor fT = 12.0 GHz TYP., ?S21e?2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., ?S21e?2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 6-pin lead-less minimold package BUILT-IN TRANSISTORS Q1 Q2 3-pin thin-type ultra super minimold part No. 2SC5435 2SC5600 ORDERING INFORMATION Part Number Quantity Supplying Form µPA841TD 50 pcs (Non reel) • 8 mm wide embossed taping µPA841TD-T3 10 kpcs/reel • Pin 1 (Q1 Collector), Pin 6 (Q1