View utc d313 datasheet:

UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC D313 is designed for use in general purpose amplifier and switching applications. 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 3 A Storage Temperature TSTG -55 ~ +150 °C Junction Temperature Tj 150 °C ELECTRICAL CHARACTERISTICS(Ta=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=1mA 60 V Collector-Emitter Breakdown Voltage BVCEO IC=10mA 60 V Emitter-Base Breakdown Voltage BVEBO IE=100uA 5 V Collector Cut-Off Current ICBO VCB=20V, IE=0 0.1 mA Emitter Cut-Off Curre