View 2sc1047 e datasheet:

Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V 1 2 3 1:Emitter Collector current IC 20 mA 2:Collector 3:Base Collector power dissipation PC 400 mW 2.54± 0.15 JEDEC:TO–92 Junction temperature Tj 150 ?C EIAJ:SC–43A Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µ A, IE = 0 30 V Emitter to base vo