View 2sc1317 e datasheet:

Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit: mm Complementary to 2SA719 and 2SA720 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA719 and 2SA720. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to 2SC1317 30 VCBO V +0.2 +0.2 base voltage 2SC1318 60 0.45 –0.1 0.45 –0.1 1.27 1.27 Collector to 2SC1317 25 VCEO V emitter voltage 2SC1318 50 Emitter to base voltage VEBO 7 V 1 2 3 1:Emitter Peak collector current ICP 1 A 2:Collector 3:Base 2.54± 0.15 Collector current IC 500 mA JEDEC:TO–92 EIAJ:SC–43A Collector power dissipation PC 625 mW Junction temperature Tj 150 ?C Storage temperature Tstg –5