View 2sc1473 e datasheet:

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit: mm 2SC1473 complementary to 2SA1018 5.0± 0.2 4.0± 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to 2SC1473 250 1.27 1.27 VCBO V base voltage 2SC1473A 300 Collector to 2SC1473 200 VCEO V 1 2 3 1:Emitter emitter voltage 2SC1473A 300 2:Collector 3:Base Emitter to base voltage VEBO 7 V 2.54± 0.15 JEDEC:TO–92 Peak collector current ICP 100 mA EIAJ:SC–43A Collector current IC 70 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C El