View 2sc1509 e datasheet:

Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit: mm Complementary to 2SA777 5.9± 0.2 4.9± 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7± 0.1 2.54± 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 80 V +0.2 +0.2 0.45–0.1 0.45–0.1 1.27 1.27 Emitter to base voltage VEBO 5 V 1:Emitter Peak collector current ICP 1 A 2:Collector 1 2 3 3:Base Collector current IC 0.5 A EIAJ:SC–51 Collector power dissipation PC 1 W TO–92L Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Par