View 2sc1923 datasheet:

2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications • Small reverse transfer capacitance: Cre = 0.7 pF (typ.) • Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA Base current IB 4 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ.