View 2sc1959 datasheet:

2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity : h = 25 (min): V = 6 V, I = 400 mA FE (2) CE C • 1 watt amplifier applications. • Complementary to 2SA562TM. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 100 mA Collector power dissipation PC 500 mW JEDEC TO-92 Junction temperature Tj 150 °C JEITA SC-43 Storage temperature range Tstg -55~150 °C TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25°