View 2sc2120 datasheet:

2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm • High hFE: h = 100~320 FE (1) • 1 watts amplifier applications. • Complementary to 2SA950 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 35 V, IE = 0 ? ?