View 2sc2188 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55± 0.1 0.45± 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 45 V Collector to emitter voltage VCEO 35 V 2.5 2.5 Emitter to base voltage VEBO 4 V Collector current IC 50 mA 1:Base 2:Collector EIAJ:SC–71 Collector power dissipation PC 600 mW 3:Emitter M Type Mold Package Junction temperature Tj 150 ?C Storage temperature Tstg –55
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2sc2188 e Datasheet, Design, MOSFET, Power
2sc2188 e RoHS, Compliant, Service, Triacs, Semiconductor
2sc2188 e Database, Innovation, IC, Electricity
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