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View 2sc2404 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc2404_e

Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 �0.3 +0.25 Features 0.65� 0.15 1.5 �0.05 0.65� 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 Parameter Symbol Ratings Unit 0.4� 0.2 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V 1:Base JEDEC:TO�236 2:Emitter EIAJ:SC�59 Collector current IC 15 mA 3:Collector Mini Type Package Collector power dissipation PC 150 mW Junction temperature Tj 150 ?C Marking symbol : U Storage temperature

Keywords

 2sc2404 e Datasheet, Design, MOSFET, Power

 2sc2404 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc2404 e Database, Innovation, IC, Electricity

 

 
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