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View 2sc2405 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc2405_e

Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SA1034 and 2SA1035 Features +0.2 2.8 –0.3 Low noise voltage NV. +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum Ratings (Ta=25?C) 2 Parameter Symbol Ratings Unit Collector to 2SC2405 35 VCBO V base voltage 2SC2406 55 0.1 to 0.3 Collector to 2SC2405 35 0.4± 0.2 VCEO V emitter voltage 2SC2406 55 Emitter to base voltage VEBO 5 V Peak collector current ICP 100 mA 1:Base JEDEC:TO–236 Collector current IC 50 mA 2:Emitter EIAJ:SC–59 3:Collector Mini

Keywords

 2sc2405 e Datasheet, Design, MOSFET, Power

 2sc2405 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc2405 e Database, Innovation, IC, Electricity

 

 
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