View 2sc2459 datasheet:

2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2459 Audio Amplifier Applications Unit: mm � High breakdown voltage: VCEO = 120 V (max) � High DC current gain: h = 200~700 FE � Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C � Low noise: NF = 1dB (typ.), 10dB (max) � Complementary to 2SA1049. � Small package. Maximum Rat

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050