View 2sc2459 datasheet:

2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: h = 200~700 FE • Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1049. • Small package. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 20 mA JEDEC ? Collector power dissipation PC 200 mW Junction temperature Tj 125 °C JEITA ? Storage temperature range Tstg -55~125 °C TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Electri