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View 2sc2480 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc2480_e

Transistor 2SC2480 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm +0.2 2.8 –0.3 +0.25 Features 0.65± 0.15 1.5 –0.05 0.65± 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 Parameter Symbol Ratings Unit 0.4± 0.2 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 Collector current IC 50 mA 3:Collector Mini Type Package Collector power dissipation PC 150 mW Junction temperature Tj 150 ?C Marking symbol : R Storage temperature Tstg –55 ~ +150 ?C Electri

Keywords

 2sc2480 e Datasheet, Design, MOSFET, Power

 2sc2480 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc2480 e Database, Innovation, IC, Electricity

 

 
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