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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc2498

2SC2498 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF~UHF Band Low Noise Amplifier Application Unit: mm Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 300 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1E Weight: 0.21 g (typ.) Microwave Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 10 V, IC = 10 mA ? 3.5 ? GHz ?S21e?2 (1) VCE = 10 V, IC = 10 mA, f = 500 MHz ? 14.5 ? Insertion gain dB ?S21e?2 (2)

Keywords

 2sc2498 Datasheet, Design, MOSFET, Power

 2sc2498 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc2498 Database, Innovation, IC, Electricity

 

 
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