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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc2532

2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2532 Audio Frequency Amplifier Applications Unit: mm Driver Stage for LED Lamp Applications Temperature Compensation Applications • High hFE: hFE (1) = 5000 (min) (IC = 10 mA) h (2) = 10000 (min) (IC = 100 mA) FE Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 10 V Collector current IC 300 mA Base current IB 60 mA Collector power dissipation PC 150 mW JEDEC TO-236MOD Junction temperature Tj 125 °C JEITA SC-59 Storage temperature range Tstg -55~125 °C TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Con

Keywords

 2sc2532 Datasheet, Design, MOSFET, Power

 2sc2532 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc2532 Database, Innovation, IC, Electricity

 

 
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