View 2sc2632 e datasheet:

Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SA1124 5.9± 0.2 4.9± 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7± 0.1 2.54± 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 150 V +0.2 +0.2 Collector to emitter voltage VCEO 150 V 0.45–0.1 0.45–0.1 1.27 1.27 Emitter to base voltage VEBO 5 V 1:Emitter Peak collector current ICP 100 mA 2:Collector 1 2 3 Collector current IC 50 mA 3:Base EIAJ:SC–51 Collector power dissipation PC 1 W TO–92L Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C