View 2sc2634 e datasheet:

Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SA1127 5.0± 0.2 4.0± 0.2 Features Low noise voltage NV. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 –0.1 0.45 –0.1 1.27 1.27 Collector to emitter voltage VCEO 55 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA 1 2 3 1:Emitter Collector current IC 100 mA 2:Collector 3:Base 2.54± 0.15 Collector power dissipation PC 400 mW JEDEC:TO–92 Junction temperature Tj 150 ?C EIAJ:SC–43A Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 1