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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc2644

2SC2644 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2644 VHF~UHF Band Wideband Amplifier Applications Unit: mm • High gain • Low IMD • fT = 4 GHz (typ.) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3.0 V Collector current IC 120 mA Emitter current IB 40 mA Collector power dissipation PC 0.5 W Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1E Weight: 0.21 g (typ.) Microwave Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 10 V, IC = 30 mA ? 4.0 ? GHz ?S21e?2 (1) VCE = 10 V, IC = 30 mA, f

Keywords

 2sc2644 Datasheet, Design, MOSFET, Power

 2sc2644 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc2644 Database, Innovation, IC, Electricity

 

 
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