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View 2sc2647 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc2647_e

Transistor 2SC2647 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55± 0.1 0.45± 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 2.5 2.5 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA 1:Base 2:Collector EIAJ:SC–71 Collector power dissipation PC 400 mW 3:Emitter M Type Mold Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteris

Keywords

 2sc2647 e Datasheet, Design, MOSFET, Power

 2sc2647 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc2647 e Database, Innovation, IC, Electricity

 

 
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