View 2sc2668 datasheet:

2SC2668 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2668 High Frequency Amplifier Applications Unit: mm FM, RF, IF Amplifier Applications • Small reverse transfer capacitance: Cre = 0.70 pF (typ.) • Low noise figure: NF = 2.5dB (typ.) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA Emitter current IB 4 mA Collector power dissipation PC 100 mW Junction temperature range Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA ? TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Colle