View 2sc2670 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2670 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 100 mA Base current IB 20 mA Collector power dissipation PC 200 mW Junction temperature Tj 125 °C JEDEC ? Storage temperature range Tstg -55~125 °C JEITA ? TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off curren
Keywords
2sc2670 Datasheet, Design, MOSFET, Power
2sc2670 RoHS, Compliant, Service, Triacs, Semiconductor
2sc2670 Database, Innovation, IC, Electricity
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