View 2sc2671 e datasheet:

Transistor 2SC2671(F) Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCER* 14 V Emitter to base voltage VEBO 2 V 1 2 3 1:Base Collector current IC 80 mA 2:Emitter Collector power dissipation PC 600 mW 3:Collector 2.54± 0.15 JEDEC:TO–92 Junction temperature Tj 150 ?C EIAJ:SC–43A Storage temperature Tstg –55 ~ +150 ?C * REB = 1k? Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 µ A Emitter c