View 2sc2710 datasheet:

2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C JEDEC ? JEITA ? TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 35 V, IE = 0 ? ? 0.1 µA Emitter cut-off current