View 2sc2713 datasheet:

2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C • High h h = 200~700 FE: FE • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1163 • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 20 mA Collector power dissipation PC 150 mW JEDEC TO-236MOD Junction temperature Tj 125 °C JEITA SC-59 Storage temperature range Tstg -55~125 °C TOSHIBA 2-3F1A Weight: 0.012 g (typ.)