View 2sc2778 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 Parameter Symbol Ratings Unit 0.4± 0.2 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V 1:Base JEDEC:TO–236 Collector current IC 30 mA 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbol : K Storage temperature T
Keywords
2sc2778 e Datasheet, Design, MOSFET, Power
2sc2778 e RoHS, Compliant, Service, Triacs, Semiconductor
2sc2778 e Database, Innovation, IC, Electricity