View 2sc2878 datasheet:

2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C • Low on resistance: R = 1 ? (typ.) (I = 5 mA) ON B Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Base current IB 60 mA Collector power dissipation PC 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition