View 2sc982tm datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC982TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) 2SC982TM Printer Drive, Core Drive and LED Drive Applications Unit: mm Low Frequency Amplifier Applications • High DC current gain: hFE (1) = 5000 (min) (I = 10 mA) C : h = 10000 (min) (I = 100 mA) FE (2) C Equivalent Circuit Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V JEDEC TO-92 Collector-emitter voltage VCEO 40 V JEITA SC-43 Emitter-base voltage VEBO 10 V TOSHIBA 2-5F1B DC IC 300 Weight: 0.21 g (typ.) Collector current mA Pulsed ICP 500 (Note) Base current IB 10 mA Collector power dissipation PC 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C < 10 ms, duty cycle < 10% N
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2sc982tm Datasheet, Design, MOSFET, Power
2sc982tm RoHS, Compliant, Service, Triacs, Semiconductor
2sc982tm Database, Innovation, IC, Electricity
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