View xbrp40045ctlrev0 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by XBRP40045CTL/D Product Preview SWITCHMODE? XBRP40045CTL Schottky Power Rectifier POWERTAP II? Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon SCHOTTKY BARRIER power diode. State–of–the–art geometry features epitaxial construction with RECTIFIER oxide passivation and metal overlay contact. Ideally suited for low voltage, high 400 AMPERES frequency switching power supplies, free wheeling diode and polarity protection 45 VOLTS diodes. • Highly Stable Oxide Passivated Junction • Guardring for Stress Protection • Matched Dual Die Construction; May be Paralleled for High Current Output • Low Forward Voltage Mechanical Characteristics: 1 2 • Case: Epoxy, Molded with Metal H