View bta225b-800bt isc detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
INCHANGE Semiconductor isc Triacs BTA225B-800BT DESCRIPTION With TO-3PN packaging Operating in 4 quadrants High commutation capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Phase control Static switching on inductive or resistive load . ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MIN UNIT V Repetitive peak off-state voltage 800 V DRM V Repetitive peak reverse voltage 800 V RRM I RMS on-state current Tc = 100 25 A T(RMS) 50HZ 190 I Non-repetitive peak on-state current A TSM 60HZ 209 T Operating junction temperature -40 125 j T Storage temperature -40 150 stg R Thermal resistance Junction to Case 1.4 /W th(j-c) isc website www.iscsemi.c... See More ⇒
Keywords
bta225b-800bt isc Design, MOSFET, Power
bta225b-800bt isc RoHS, Compliant, Service, Triacs, Semiconductor
bta225b-800bt isc Innovation, IC, Electricity
BJT Parameters and How They Relate
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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