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bta225b-800bt_isc

INCHANGE Semiconductor isc Triacs BTA225B-800BT DESCRIPTION ·With TO-3PN packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT V Repetitive peak off-state voltage 800 V DRM V Repetitive peak reverse voltage 800 V RRM I RMS on-state current Tc = 100℃ 25 A T(RMS) 50HZ 190 I Non-repetitive peak on-state current A TSM 60HZ 209 T Operating junction temperature -40~125 ℃ j T Storage temperature -40~150 ℃ stg R Thermal resistance（Junction to Case） 1.4 ℃/W th(j-c) isc website：www.iscsemi.c

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 bta225b-800bt isc Datasheet, Design, MOSFET, Power

 bta225b-800bt isc RoHS, Compliant, Service, Triacs, Semiconductor

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