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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

iscsm232w

Schottky Barrier Rectifier ISCSM232W FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V RRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage V 100 V RWM DC Blocking Voltage V R I Average Rectified Forward Current 40 A F(AV) Nonrepetitive Peak Surge Current I 300 A FSM 8.3ms single half sine-wave superimpos

Keywords

 iscsm232w Datasheet, Design, MOSFET, Power

 iscsm232w RoHS, Compliant, Service, Triacs, Semiconductor

 iscsm232w Database, Innovation, IC, Electricity

 

 
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