View mbrb1560ct detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
Schottky Barrier Rectifier MBRB1560CT FEATURES Plastic material used carriers Underwriter Laboratory Metal silicon junction, majority carrier conduction Low Power Loss,high Efficiency Guard ring for overvoltage protection High Surge Capability,High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V RRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 60 V V RWM DC Blocking Voltage V R I Average Rectified Forward Current 15 A F(AV) Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed 150 A I... See More ⇒
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mbrb1560ct Design, MOSFET, Power
mbrb1560ct RoHS, Compliant, Service, Triacs, Semiconductor
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BJT Parameters and How They Relate
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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