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P0603BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6.5m @VGS = 10V 30V 68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 68 ID Continuous Drain Current TC= 100 C 43 A IDM 180 Pulsed Drain Current1 IAS Avalanche Current 52 EAS Avalanche Energy L=0.1mH 136 mJ TC= 25 C 50 PD Power Dissipation W TC= 100 C 20 Tj, Tstg Operating Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 2.5 C / W Junction-to-Ambient RqJA 62.5 1 Pulse width limited by maximum junction temperatur... See More ⇒