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View v30100c vi30100c detailed specifications:

POWER MOSFET, IGBT, IC, TRIACS DATABASE

v30100c_vi30100c

New Product V30100C, VI30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A FEATURES Trench MOS Schottky technology TMBS Low forward voltage drop, low power losses TO-220AB TO-262AA High efficiency operation K Low thermal resistance Solder dip 275 C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in 3 3 2 accordance to WEEE 2002/96/EC 2 1 1 Halogen-free according to IEC 61249-2-21 definition V30100C VI30100C PIN 1 PIN 1 PIN 2 PIN 2 TYPICAL APPLICATIONS PIN 3 CASE PIN 3 K For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.... See More ⇒

Keywords

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