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Si9953DY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.25 @ VGS = 10 V "2.3 20 20 0.40 @ VGS = 4.5 V "1.5 S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VGS "20 TA = 25_C "2.3 Continuous Drain Current (TJ = 150_C)a ID Continuous Drain Current (TJ = 150_C)a ID TA = 70_C "1.8 A A A Pulsed Drain Current IDM "10 Continuous Source Current (Diode Conduction)a IS 1.7 TA = 25_C 2.0 Maximum Power Dissipationa PD W Maximum Power Dissipationa PD W TA = 70_C 1.3 Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Un

 

Keywords - ALL TRANSISTORS. Principales características

 si9953dy.pdf Design, MOSFET, Power

 si9953dy.pdf RoHS Compliant, Service, Triacs, Semiconductor

 si9953dy.pdf Database, Innovation, IC, Electricity

 

 
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