aok20s60l.pdf Principales características:
AOK20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK20S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 80A high levels of performance and robustness in switching RDS(ON),max 0.199 applications. Qg,typ 20nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V 4.9 J guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number AOK20S60L D G S S D G AOK20S60 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOK20S60 Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC=25 C 20 Continuous Drain ID Current TC=100 C 14 A Pulsed Drain Current C ID
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aok20s60l.pdf Design, MOSFET, Power
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