aot10b60d.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

aot10b60d.pdf Principales características:

AOT10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft co- package diode is targeted for minimal losses in motor control applications. 100% Eon/Eoff Tested 100% Qrr Tested 100% Short Circuit Current Tested* Top View Top View C C TO-220 TO-220 G G E E C C G G E E AOT10B60D AOT10B60D Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOT10B60D Units Parameter Symbol AOT10B60D Units Collector-Emitter Voltage V 600 V CE Gate-Emitter Voltage V 20 V GE TC=25 C 20 Continuou