aot10n65.pdf Principales características:
AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
Keywords - ALL TRANSISTORS. Principales características
aot10n65.pdf Design, MOSFET, Power
aot10n65.pdf RoHS Compliant, Service, Triacs, Semiconductor
aot10n65.pdf Database, Innovation, IC, Electricity
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