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ap04n60j.pdf Principales características:

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AP04N60J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 620V D Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description AP04N60 series are from Advanced Power innovated design and G silicon process technology to achieve the lowest possible on- D S TO-251(J) resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The straight lead version TO-251 package is widely preferred for all commercial-industrial through hole applications. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 620 V VGS Gate-Source Voltage +30 V ID@TC=25 Drain Current, VGS @ 10V 4

 

Keywords - ALL TRANSISTORS. Principales características

 ap04n60j.pdf Design, MOSFET, Power

 ap04n60j.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ap04n60j.pdf Database, Innovation, IC, Electricity

 

 
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