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apt11gf120brdq1g.pdf Principales características:

TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1(G) 1200V APT11GF120BRDQ1 APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fast switching speed. G C E Low Forward Voltage Drop High Freq. Switching to 20KHz RBSOA and SCSOA Rated Ultra Low Leakage Current C Ultrafast Soft Recovery Anti-parallel Diode G E MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Parameter UNIT Symbol APT11GF120BRDQ1(G) VCES Collector-Emitter Voltage 1200 Volts VGE Gate-Emitter Voltage 30 IC1 Continuous Collector Current @ TC = 25 C 25 IC2 Continuous Collector Current @ TC = 100 C

Keywords - ALL TRANSISTORS. Principales características

 apt11gf120brdq1g.pdf Design, MOSFET, Power

 apt11gf120brdq1g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt11gf120brdq1g.pdf Database, Innovation, IC, Electricity