apt11gp60k.pdf datasheet:

TYPICAL PERFORMANCE CURVES APT11GP60K_SA APT11GP60K APT11GP60SA 600V (K) POWER MOS 7 IGBT (SA) TO-220 D2PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, C high voltage switching applications and has been optimized for high frequency G E switchmode power supplies. GC E Low Conduction Loss SSOA rated C Low Gate Charge G Ultrafast Tail Current shutoff E MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11GP60K_SA UNIT VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage 20 Volts 30 VGEM Gate-Emitter Voltage Transient IC1 Continuous Collector Current @ TC = 25 C 41 Amps IC2 Continuous Collector Current @ TC = 100 C 20 ICM Pulsed Collector Current 1 @ TC = 150 C 45 SSOA Switching Sa